Dr Karen Vernon-Parry

Karen_Vernon_Parry.jpg
Job title: 
Senior Lecturer

Phone 0114 225 4852 
E-mail k.vernon-parry@shu.ac.uk

Research interests

My research interests lie in the development and evolution of process-induced defects in semiconductors, originally ion implantation damage in silicon and silicon-germanium, and more recently in wide band gap materials such as semiconducting diamond and GaN. Such studies are in support of electronic device development.  I use a variety of electrical characterisation techniques, such as current-voltage and capacitance-voltage measurements as well as deep level transient spectroscopy in this work. 

I have a keen interest in multidisciplinary work, and am leading a project to develop an "intelligent" pressure cuff for the lower leg. I also am heavily involved in 'What's in my stuff', an interdisciplinary research project which brings together science and art with the aim of raising awareness about the materials contained within some of the objects we own.

PhD students working with me currently are: Ali ElHaji (GaN) and Osama El-Sherif (diamond and GaN).

Research collaborations

Prof. Eugene Terentjev's group at Cambridge University (Intelligent pressure cuff)

I was part of an EPSRC project run by Prof Colin Humphreys at Cambridge University (p-type GaN)

Dr Paul May at the University of Bristol (semiconducting diamond)

Dr Colin Leach, University of Manchester (electroceramics, especially ZnO)

Key publications

All of Karen's papers can be accessed at SHURA 

  • "Deep level transient spectroscopy study of the effect of Mn and Bi doping on trap formation in ZnO", C Leach, KD Vernon-Parry and NK Ali, Journal of Electroceramics25 (2-4), 2010, p188-197
  • "The effect of hole confinement on photoluminescence from Er in SiGe/Si quantum wells” KD  Vernon-Parry, JH Evans-Freeman and P Dawson, Materials Science and Engineering B-Solid State Materials For Advanced Technology 146 (1-3), 2008, p231-235
  • “High resolution deep level transient spectroscopy of p-n diodes formed from p-type polycrystalline diamond on n-type silicon”  K.D. Vernon-Parry, J.H. Evans-Freeman,  N. Mitromara and P.W. May, Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'08),2008, p16-19
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